Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Ampleon Netherlands B.V...
|
BLS6G2735L-30 |
1Mb/17P |
S-band LDMOS transistor Rev. 4 ??1 September 2015 |
BLS6G2731-120 |
1Mb/13P |
LDMOS S-band radar power transistor Rev. 2 ??1 September 2015 |
BLS6G2933S-130 |
837Kb/12P |
LDMOS S-band radar power transistor Rev. 4 ??1 September 2015 |
BLS7G2729L-350P |
1,008Kb/13P |
LDMOS S-band radar power transistor Rev. 6 ??1 September 2015 |
BLS7G3135L-350P |
1Mb/13P |
LDMOS S-band radar power transistor Rev. 4 ??1 September 2015 |
BLL6G1214L-250 |
1Mb/13P |
LDMOS L-band radar power transistor Rev. 3 ??28 January 2016 |
BLL6H1214-500 |
1Mb/21P |
LDMOS L-band radar power transistor Rev. 4 ??1 September 2015 |
BLS9G2731L-400 |
1Mb/13P |
LDMOS S-band radar power transistor Rev. 1 ??13 April 2017 |
BLL8H1214L-250 |
941Kb/13P |
LDMOS L-band radar power transistor Rev. 3 ??1 September 2015 |
BLS9G2729L-350 |
1Mb/13P |
LDMOS S-band radar power transistor Rev. 1 ??13 April 2017 |
BLS9G2934L-400 |
1Mb/13P |
LDMOS S-band radar power transistor Rev. 1 ??6 April 2017 |
BLS6G2731S-130 |
880Kb/12P |
LDMOS S-band radar power transistor Rev. 3 ??1 September 2015 |
BLS7G3135LS-200 |
761Kb/10P |
LDMOS S-band radar power transistor Rev. 3 ??1 September 2015 |
BLL8H1214L-500 |
1Mb/20P |
LDMOS L-band radar power transistor Rev. 3 ??1 September 2015 |
BLL9G1214L-600 |
1Mb/13P |
LDMOS L-band radar power transistor Rev. 2 ??6 November 2018 |
BLS9G3135L-400 |
1Mb/13P |
LDMOS S-band radar power transistor Rev. 1 ??6 April 2017 |
BLS9G2735L-50 |
1Mb/14P |
LDMOS S-band radar power transistor Rev. 1 ??6 October 2017 |
BLS9G3135L-115 |
1Mb/13P |
LDMOS S-band radar power transistor Rev. 1 ??25 July 2019 |
CLL3H0914L-700 |
1Mb/18P |
L-band internally pre-matched GaN-SiC HEMT Rev. 1 - 15 July 2022 |
BLP9LA25S |
2Mb/23P |
General description This 13.6 V 25 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 941 MHz. Rev. 2 ??16 July 2021 |