Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
California Eastern Labs
|
UPC8190K |
203Kb/6P |
RX-IF SiMMIC FOR W-CDMA AGC + I/Q DEMODULATOR |
UPC8195K |
206Kb/7P |
TX-IF SiMMIC FOR W-CDMA AGC + I/Q MODULATOR |
UPC8194K |
207Kb/7P |
RX-IF SiMMIC FOR W-CDMA AGC + I/Q DEMODULATOR |
UPC8191K |
168Kb/7P |
TX-IF SiMMIC FOR 2-CDMA ACG + I/Q MODULATOR |
UPC2798GR |
236Kb/15P |
250 MHz QAM IF DOWNCONVERTER |
UPG183GR |
160Kb/4P |
GaAs MMIC DBS 4X2 IF SWITCH |
UPG181GR |
148Kb/4P |
GaAs MMIC DBS TWIN IF SWITCH |
UPG2030TK |
472Kb/10P |
1 W ULTRA SMALL SPDT SWITCH |
NE55410GR |
580Kb/14P |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER |
UPG2155TB |
184Kb/7P |
L-BAND 4 W HIGH POWER SPDT SWITCH |
UPG2012TK |
363Kb/8P |
W SINGLE CONTROL L, S-BAND SPDT SWITCH |
NE650103M |
259Kb/7P |
10 W L & S-BAND POWER GaAs MESFET |
NE55410GR |
558Kb/13P |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER |
UPG2155TB |
309Kb/7P |
NEC?셲 L-BAND 4 W HIGH POWER SPDT SWITCH |
2SC5754 |
1Mb/12P |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) |
NE5520279A |
351Kb/8P |
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
NE552R479A |
495Kb/9P |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET |
NE552R479A-T1-A |
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS |
NE5531079A |
382Kb/8P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS |
NESG270034 |
349Kb/11P |
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) |