Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Siemens Semiconductor G...
|
SPLBXXX |
20Kb/2P |
Unmounted Laser Bars 20 W cw ... 100 W qcw |
TDA4930 |
580Kb/14P |
Stereo/Bridge AF Amplifier 2 x 10 W/20 W |
SPLCGXX |
91Kb/5P |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product |
SPL2YXX |
115Kb/6P |
Laser Diode in TO-220 Package 1.0 W cw Class 4 Laser Product |
SPLPLXX |
78Kb/4P |
Pulsed Laser Diode in Plastic Package 10 W Peak Class 3 Laser Product |
BGA427 |
35Kb/5P |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
CGY184 |
141Kb/14P |
GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) |
SPL2FXX |
122Kb/6P |
Laser Diode in TO-220 Package with FC-connector 0.75 W cw Class 4 Laser Product |
CGY96 |
101Kb/10P |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
BGA318 |
20Kb/4P |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
BGA312 |
20Kb/4P |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
BGA310 |
20Kb/4P |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
3VA5330-6EC31-0AA0 |
666Kb/6P |
CIRCUIT BREAKER 3VA5 UL Frame 400 BREAKING CAPACITY CLASS H 65kA @ 480 V 3POLE, LINE PROTECTION TM230, FTAM, In=300A WITHOUT OVERLOAD PROTECTION IR=300A FIXED SHORT CIRCUIT PROTECTION Ii=5...10 x In W/O CONNECTION 04/26/2020 |