Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Motorola, Inc
|
MTB52N06VL |
200Kb/10P |
TMOS POWER FET 52 AMPERES 60 VOLTS |
MTB52N06V |
198Kb/10P |
TMOS POWER FET 52 AMPERES 60 VOLTS |
MTP52N06V |
162Kb/8P |
TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM |
MTP52N06VL |
166Kb/8P |
TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM |
MHW930 |
52Kb/3P |
30 W 925.960 MHz RF POWER AMPLIFIER |
MHW932 |
117Kb/6P |
32 W 890 to 915 MHz RF POWER AMPLIFIER |
MHW803 |
79Kb/5P |
2 W, 806 to 905 MHz UHF POWER AMPLIFIERS |
MHW903 |
154Kb/8P |
3.5 W 890 to 915 MHz RF POWER AMPLIFIERS |
MHW912 |
128Kb/6P |
12.5 W 884 to 915 MHz RF POWER AMPLIFIER |
MHW927A |
166Kb/6P |
6.0 W 824 to 849 MHz RF LINEAR POWER AMPLIFIERS |
MRF9180 |
342Kb/12P |
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
MRF9085 |
491Kb/8P |
880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
MRF9060 |
393Kb/12P |
945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
MRF18090A |
175Kb/8P |
1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS |
2N6439 |
127Kb/6P |
60 W, 225 to 400 MHz CONTROLLED ?쏲??BROADBAND RF POWER TRANSISTOR NPN SILICON |
MRF9100 |
395Kb/12P |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
MRF275G |
226Kb/12P |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET |
MRF5S19090LR3 |
412Kb/12P |
1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |