Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
DB Lectro Inc
|
ESD200 |
720Kb/2P |
Output Interface UART, Compliant Bluetooth stack v1.2-improved |
ESD210 |
720Kb/2P |
Output Interface UART, Compliant Bluetooth stack v1.2-improved AFH |
HANAMICRON
|
HBM1X1M |
229Kb/17P |
Bluetooth V1.2 Class 1 Module |
Axiomtek Co., Ltd.
|
Q7M110-110-EVK |
246Kb/1P |
High flexibility Qseven v1.2 compliant design |
CoreHW Semiconductor Lt...
|
CHW1010-ANT3-1.0 |
355Kb/4P |
CoreHW Gen3S PCB Product Brief V1.2 V1.2 |
HANAMICRON
|
HBM2X1M |
211Kb/18P |
Bluetooth V1.2 Class 2 Module |
Maxim Integrated Produc...
|
MAX9633 |
808Kb/12P |
Improved Reliability Rev 4; 1/15 |
Axiomtek Co., Ltd.
|
Q7M110 |
185Kb/1P |
High flexibility Qseven v1.2 compliant design |
CoreHW Semiconductor Lt...
|
CHW1010-ANT2-1.0 |
518Kb/4P |
CoreHW Gen3 PCB Product Brief V1.2 V1.2 |
TT Electronics.
|
PWC |
672Kb/4P |
improved working voltage |
Silicon Laboratories
|
TS6001 |
1Mb/13P |
Improved Electrical Performance |
Samsung semiconductor
|
IRFS640A |
304Kb/6P |
Improved gate charge |
IRFS641 |
308Kb/5P |
Improved inductive ruggedness |
Advanced Power Electron...
|
AP02N70EJ-HF |
65Kb/4P |
ESD Improved Capability |
Ohmite Mfg. Co.
|
RES-RX1M |
253Kb/1P |
Improved voltage stability |
Samsung semiconductor
|
SSP4N80 |
296Kb/5P |
improved inductive ruggedness |
Advantech Co., Ltd.
|
ROM-DB7500 |
550Kb/2P |
Development Board for Qseven v1.2 RISC Module 4-Mar-2016 |
ROM-DK7420 |
430Kb/2P |
Development Kit for Qseven v1.2 Module ROM-7420 6-Jun-2019 |
Delta Electronics, Inc.
|
DLBM-CS222 |
82Kb/9P |
Wireless communication module compliant with Bluetooth Specification V1.2. |
Broadcom Corporation.
|
BCM1200-BTEM |
365Kb/2P |
BLUETOOTH-R V1.2 COMMUNICATIONS SOFTWARE FOR MOBILE PHONES |