Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Hamamatsu Corporation
|
L12536 |
202Kb/4P |
ELECTROSTATIC CHARGE REMOVER USING PHOTOIONIZATION |
S12028_KPIN1083E01 |
575Kb/3P |
Enhanced near IR sensitivity, using a MEMS |
S11519 |
571Kb/4P |
Enhanced near IR sensitivity, using a MEMS technology |
L2791 |
117Kb/2P |
Small emission spot LED using current confined chip |
S8673 |
125Kb/2P |
One-dimensional PSD using SIP (Single Inline Package) |
L10596 |
139Kb/4P |
Small emission spot LED using current con-ned chip |
L7868 |
135Kb/2P |
Small emission spot, red LED using current confined chip |
S11499 |
429Kb/3P |
Large area, enhanced near IR sensitivity, using a MEMS technology |
L2791 |
72Kb/3P |
Infrared LED Small emission spot LED using current confined chip |
S10747-0909 |
486Kb/7P |
Enhanced near-infrared sensitivity by using fully-depleted CCD technology |
S9345 |
99Kb/2P |
Si PIN photodiode Dual-element photodiode using newly developed small, thin package |
S10108 |
104Kb/3P |
For flame eye/using photo IC diode (RoHS compliance) instead of CdS cell |