TRR Datasheet(PDF) - CTXS-5606S

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Sanken electric	CTXS-5606S	276Kb/6P	VRM = 600 V, IF(AV) = 60 A, trr = 50 ns Fast Recovery Diode
International Rectifier	OM5221SM	13Kb/1P	Hermetic Surface Mount Package, 20 Amp, 50 To 200 Volts, 35 ns trr
Sanken electric	FML-4202S	243Kb/6P	VRM = 200 V, IF(AV) = 20 A, trr = 40 ns Fast Recovery Diode
Sanken electric	FMLB-4204S	240Kb/6P	VRM = 400 V, IF(AV) = 20 A, trr = 50 ns Fast Recovery Diode
Sensitron	SD175SC200A	63Kb/3P	Ultra Fast Trr < 24 nsec SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop
IXYS Corporation	IXFH8N80	206Kb/4P	HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXYS Corporation	IXFH14N100Q2	564Kb/4P	N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
International Rectifier	IRFP26N60LPBF	206Kb/9P	HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210m廓 , Trr typ. = 170ns , ID = 26A )
International Rectifier	IRFP23N50LPBF	202Kb/9P	HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190廓 , Trr typ. = 170ns , ID = 23A )
IXYS Corporation	IXFN38N100Q2	565Kb/4P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
Sanken electric	SJPX-H3VR	244Kb/5P	SJPX-H3 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
	SJPX-F2VR	242Kb/5P	SJPX-F2 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
	SJPX-H6VR	232Kb/5P	SJPX-H6 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.

TRR Datasheet, PDF

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