Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
GE Solid State
|
2N3858 |
154Kb/5P |
SILICON TRANSISTORS |
2N5365 |
218Kb/5P |
SILICON TRANSISTORS |
2N2926 |
35Kb/2P |
SILICON TRANSISTORS |
GES5814 |
216Kb/4P |
Signal Transistors |
2N3390 |
131Kb/4P |
SILICON TRANSISTORS |
2N5305 |
126Kb/4P |
SILICON DARLINGTON TRANSISTORS |
MPS-A12 |
63Kb/2P |
SILICON DARLINGTON TRANSISTORS |
IRFF110 |
176Kb/5P |
Power MOS Field-Effect Transistors |
RCA9202A |
206Kb/4P |
4 AMPERE NPN DARLINGTON POWER TRANSISTORS |
RCA3054 |
266Kb/5P |
SILICON N-P-N VERSAWATT TRANSISTORS |
RCA1B04 |
72Kb/2P |
SILICON TRANSISTORS FOR AUDIO-AMPLIFIER APPLICATIONS |
2N6032 |
290Kb/5P |
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS |
3N206 |
363Kb/8P |
Silicon Dual Insulated-Gate Field-Effect Transistors |
2N3878 |
413Kb/7P |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
IRFF130 |
161Kb/5P |
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
RFM10P12 |
242Kb/4P |
P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS |
RFM10N12 |
211Kb/4P |
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
BU323 |
222Kb/4P |
10-Ampere N-P-N Monolithic Darlington Power Transistors |
IRFF120 |
165Kb/5P |
N-Channel Enhancement-Mode Power MOS Field-Effect Transistors |
2N5038 |
351Kb/7P |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS |