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TRANSISTOR USING Datasheets, PDF

Lowpower Semiconductor inc(8)NXP Semiconductors(2094)Pan Jit International Inc.(72)Panasonic Battery Group(2)Panasonic Semiconductor(292)Pasternack Enterprises, Inc.(4048)PerkinElmer Optoelectronics(1)PHOENIX CONTACT(50)PMC-Sierra, Inc(2)Polyfet RF Devices(276)Potato Semiconductor Corporation(4)Power Innovations Ltd(13)Power Integrations, Inc.(67)Powerex Power Semiconductors(58)PREMO CORPORATION S.L(4)QT Optoelectronics(1)Ralston Instruments.(23)Rectron Semiconductor(130)Renesas Technology Corp(471)RF Micro Devices(3)RFHIC(4)rfsolutions.ltd(3)RHOPOINT COMPONENTS(2)Richtek Technology Corporation(1)RICOH electronics devices division(1)Rochester Electronics(1)Rohm(1035)Sames(1)SamHop Microelectronics Corp.(310)Samsung semiconductor(238)Sanken electric(395)SanRex Corporation(20)Sanyo Semicon Device(287)Savantic, Inc.(4)SeCoS Halbleitertechnologie GmbH(928)Seiko Instruments Inc(4)Seme LAB(358)Semicoa Semiconductor(107)SemiHow Co.,Ltd.(30)SemiWell Semiconductor(23)Semtech Corporation(15)SEMTECH ELECTRONICS LTD.(327)Sensitron(3)Seoul Semiconductor(20)Sharp Electrionic Components(3)Shenzhen Ping Sheng Electronics Co., Ltd.(5)SHENZHEN SLS TECHNOLOGY CO.,LTD.(1)SHIKE Electronics(65)Shindengen Electric Mfg.Co.Ltd(78)Shunye Enterprise(1)Siemens Semiconductor Group(493)SiGe Semiconductor, Inc.(1)Silan Microelectronics Joint-stock(2)Silicon Laboratories(15)Silicon Standard Corp.(6)Sipex Corporation(2)Sirectifier Global Corp.(4)SIRENZA MICRODEVICES(4)Skyworks Solutions Inc.(4)SMSC Corporation(2)Solid States Devices, Inc(199)Sony Corporation(3)Stanson Technology(89)STMicroelectronics(955)SUNMATE electronic Co., LTD(12)Sunspirit Electronic Ltd(2)Suntac Electronic Corp.(14)Supertex, Inc(2)Surge Components(9)SynQor Worldwide Headquarters(1)Tachyonics CO,. LTD(12)TAITRON Components Incorporated(16)Taiwan Memory Technology(1)Taiwan Semiconductor Company, Ltd(217)Taiyo Yuden (U.S.A.), Inc(28)TDK Electronics(5)TE Connectivity Ltd(10)Teledyne Technologies Incorporated(7)TEMIC Semiconductors(11)Texas Instruments(35)Texas Instruments(20)Thinki Semiconductor Co., Ltd.(30)Tiger Electronic Co.,Ltd(63)Torex Semiconductor(17)Toshiba Semiconductor(840)Transcom, Inc.(2)Transys Electronics(45)TRANSYS Electronics Limited(15)Tripath Technology Inc.(32)TriQuint Semiconductor(67)TT Electronics.(69)TY Semiconductor Co., Ltd(1)Vishay Telefunken(2)
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Descripción buscado : 'TRANSISTOR USING ' - Total: 48383 (1/2420) Page
Fabricante ElectrónicoNo. de piezavistaDescripción Electrónicos

Diodes Incorporated
DDC144NS 100mA PRE-BIASED TRANSISTOR ARRAY USING DUAL NPN TRANSISTOR

NXP Semiconductors
PHB191NQ06LT Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology
PSMN005-75P N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.

Stanson Technology
STP6308 STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4346 STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4435A STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2304SRG ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3407SRG ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN6335 STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3400SRG The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP9437 STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2319SRG ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STN4480 STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4426 STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STC6332 The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

NXP Semiconductors
BUK7520-55A N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.

Stanson Technology
STP6621 STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4803 STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4850 STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

NXP Semiconductors
2N7002F215 N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

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