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PRODUCED Datasheets, PDF

Descripción buscado : 'PRODUCED' - Total: 49 (1/3) Page
Fabricante ElectrónicoNo. de piezavistaDescripción Electrónicos

Stanson Technology
STP6621 STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

List of Unclassifed Man...
SW2N60 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN.

Stanson Technology
STN9926AA The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
STP4931 STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
STN4488L STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
STN4416 STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4803 STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3401SRG ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
STN4346 STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

Fairchild Semiconductor
FQD6N50C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology

Advanced XTAL Products
AXIOM35HR_18 High Stability VHF Very Low Power OCXO Produced in association with Magic XtalModel MXO37H/R

Stanson Technology
ST7400 ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP9434 STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Samsung semiconductor
RC1608J515CS We, Samsung, declare that our component Chip Resistor is produced in accordance with EU RoHS directive.

Stanson Technology
STP4435A STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN6335 STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

Fairchild Semiconductor
FDPF10N60NZ These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Stanson Technology
STN4440 STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4850 STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3422A The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

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