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MEMORIES Datasheet, PDF |
Palabra clave buscada : 'MEMORIES' - Total: 207 (10/11) Pages |
Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Numonyx B.V |
M25PE20 |
1Mb/64P |
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
NAND02G-B2D |
1Mb/69P |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories | |
SPANSION |
AM50DL128CH |
922Kb/66P |
Two Am29DL640G 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories |
Sharp Corporation |
LH28F160S5-L |
366Kb/55P |
16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming) |
Texas Instruments |
TMS28F008AXY |
714Kb/52P |
1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES |
STMicroelectronics |
PSD834F2V |
615Kb/89P |
Flash PSD, 3.3V Supply, for 8-bit MCUs 2 Mbit 256 Kbit Dual Flash Memories and 64 Kbit SRAM |
PSD835G2 |
1Mb/102P |
Flash PSD, 5V Supply, for 8-bit MCUs 4 Mbit + 256 Kbit Dual Flash Memories and 64 Kbit SRAM | |
Numonyx B.V |
M58LR128KC |
1Mb/108P |
128 or 256 Mbit (x16, mux I/O, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories |
M58WT032KT |
2Mb/117P |
32- and 64-Mbit (횞16, multiple bank, burst) 1.8 V core, 3.0 V I/O supply Flash memories | |
M58WR016KU |
2Mb/123P |
16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories | |
STMicroelectronics |
M25PE20 |
482Kb/60P |
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout |
PSD835G2V |
983Kb/118P |
Flash PSD, 3 V supply, for 8-bit MCUs 4 Mbit + 256 Kbit dual Flash memories and 64 Kbit SRAM | |
NAND256-M |
228Kb/23P |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP | |
Texas Instruments |
SN74V215 |
590Kb/43P |
512 X 18, 1024 X 18, 2048 X 18, 4096 X 18 DSP-SYNC FIRST-IN, FIRST-OUT MEMORIES |
SN74V215 |
600Kb/43P |
512 X 18, 1024 X 18, 2048 X 18, 4096 X 18 DSP-SYNC FIRST-IN, FIRST-OUT MEMORIES | |
Numonyx B.V |
NAND04G-B2D |
1Mb/69P |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories |
Texas Instruments |
SN74V215 |
555Kb/40P |
512 X 18, 1024 X 18, 2048 X 18, 4096 X 18 DSP-SYNC FIRST-IN, FIRST-OUT MEMORIES |
SN74V263 |
803Kb/52P |
8192 횞 18, 16384 횞 18, 32768 횞 18, 65536 횞 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES | |
STMicroelectronics |
M25PE20 |
480Kb/37P |
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out |
NAND128-A |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
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