Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Shenzhen Jingdao Electr...
|
BU13003F |
126Kb/3P |
Bipolar Junction Transistor |
Japan Aviation Electron...
|
DB24659R |
132Kb/1P |
DSUB JUNCTION SHELL |
Microsemi Corporation
|
APT47N65SC3 |
493Kb/6P |
Super Junction MOSFET Rev C 6-2014 |
EIC discrete Semiconduc...
|
FR201G |
100Kb/2P |
GLASS PASSIVATED JUNCTION |
M/A-COM Technology Solu...
|
MAFRIN0495 |
112Kb/2P |
Single Junction Circulator |
EIC discrete Semiconduc...
|
GRN3 |
99Kb/2P |
GLASS PASSIVATED JUNCTION |
LMR1A |
69Kb/2P |
GLASS PASSIVATED JUNCTION |
Advanced Power Technolo...
|
APT11N80KC3 |
162Kb/5P |
Super Junction MOSFET |
APT47N60BC3 |
173Kb/5P |
Super Junction MOSFET |
Glenair, Inc.
|
140G100XO-0000 |
330Kb/2P |
Mini Junction Box |
140G107XO-0000 |
353Kb/2P |
Jumbo Junction Box |
Microsemi Corporation
|
APT36N90BC3G |
140Kb/5P |
Super Junction MOSFET |
EIC discrete Semiconduc...
|
FR151G |
99Kb/2P |
GLASS PASSIVATED JUNCTION |
Silikron Semiconductor ...
|
SSBD10L200CT |
333Kb/6P |
High Junction Temperature |
SSBD1045CT |
485Kb/6P |
High Junction Temperature |
SSBD1045D |
182Kb/2P |
High Junction Temperature |
SSTS20L100CT |
384Kb/6P |
High Junction Temperature |
SSTS20U60P5 |
253Kb/5P |
High Junction Temperature |
SSTS2045 |
319Kb/6P |
High Junction Temperature |
Leshan Radio Company
|
1N4946G |
199Kb/7P |
Glass Passivated Junction |