220 Datasheet(PDF) - IPB156N22NFD - Infineon Technologies AG

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	IPB156N22NFD	989Kb/10P	OptiMOSTMFD Power-Transistor, 220 V Rev.2.0,2017-06-19
	PTFA092201E	379Kb/11P	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz Rev. 03.1, 2009-02-20
	PTFA092211EL	424Kb/10P	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 ??960 MHz Rev. 02, 2009-05-27
	SPP20N65C3	1Mb/15P	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Rev. 3.0 2007-08-30
	PTFA092213EL	671Kb/10P	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz Rev. 04, 2010-11-04
	PTFA082201E	352Kb/10P	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ??894 MHz Rev. 04.1, 2009-02-20
	PXFC192207FH	1Mb/9P	Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 ??1990 MHz Rev. 04.1, 2016-06-22
	SPP21N50C3	2Mb/14P	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev. 3.0 2007-08-30
	SPP20N60C3	1Mb/15P	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev.3.1 2009-02-19
	SPB12N50C3	1Mb/12P	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev. 2.4 2005-11-07
	SPP17N80C3	1Mb/13P	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev. 2.6 2007-08-30

220 Datasheet, PDF