Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
NXP Semiconductors
|
NA-1429 |
557Kb/8P |
BLS6G3135-120 at 3100-3500 MHz Rev. 2-28 April 2015 |
UM10486 |
601Kb/18P |
UBA2015P reference design 120 V (AC) Rev. 1.1-8 September 2011 |
UM10513 |
1Mb/26P |
UBA2015AT Reference Design 120 V (AC) Rev. 1.1-31 January 2012 |
UM10438 |
3Mb/38P |
UBA2015AP 120 V (AC) evaluation board Rev. 2.1-9 March 2012 |
TDA8924 |
722Kb/35P |
2 x 120 W class-D power amplifier 2003 Jul 28 |
AN10932 |
269Kb/33P |
120 V high power factor dimmable CFL with UBA2014 Rev. 2-17 January 2011 |
PBSS4112PAN |
255Kb/17P |
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 29 November 2012 |
PBSS4112PANP |
344Kb/21P |
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor 29 November 2012 |
UM10409 |
962Kb/25P |
120 V high power factor CFL reference board using the UBA2014T Rev. 1-12 October 2010 |
PSMN6R3-120ES |
258Kb/12P |
N-channel 120 V 6.7 m廓 standard level MOSFET in I2PAK 8 May 2013 |
PSMN7R8-120ES |
258Kb/13P |
N-channel 120 V 7.9 m廓 standard level MOSFET in I2PAK 18 February 2013 |
PSMN6R3-120PS |
274Kb/12P |
N-channel 120 V 6.7 m廓 standard level MOSFET in TO-220 7 June 2013 |