1.95V) Datasheet(PDF) - F59D2G81A - Elite Semiconductor Memory Technology Inc.

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Elite Semiconductor Mem...	F59D2G81A	1Mb/56P	Voltage Supply: 1.8V (1.7V ~ 1.95V)
	F59D4G81A	1Mb/54P	Voltage Supply: 1.8V (1.7V ~ 1.95V)
	F59D1G81A	1Mb/43P	Voltage Supply: 1.8V (1.7 V ~ 1.95V)
Freescale Semiconductor...	MMA8453QT	1Mb/47P	1.95V to 3.6V supply voltage, 1.6V to 3.6V interface voltage
International Rectifier	IRG4BC30U	167Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
	IRG4PC30U	145Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
	IRG4BC30UD	234Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
	IRG4BC30US	308Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)
	IRG4PC30UD	211Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

1.95V) Datasheet, PDF