Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |

PHOENIX CONTACT
|
1543346 |
113Kb/9P |
Bus system cable - SAC-4P-M 8MS/ 0,13-950/M 8FS 09/11/2020 |

TRIAD MAGNETICS
|
FP12-950 |
43Kb/1P |
FP12-950 |

Siemens Semiconductor G...
|
SFH4510 |
58Kb/6P |
GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm |

KR Electronics, Inc.
|
3078-950 |
75Kb/3P |
950 MHz Bandpass Filter |

WALSIN TECHNOLOGY CORPO...
|
RFHPF3225170F07B1U |
583Kb/7P |
950~2150MHz Band RF Application |

Infineon Technologies A...
|
SFH4200 |
81Kb/7P |
Schnelle GaAs-IR-Lumineszenzdiode (950 nm),High-Speed GaAs Infrared Emitter (950 nm) 2000-01-01 |

WALSIN TECHNOLOGY CORPO...
|
RFHPF3225170F0T |
605Kb/7P |
950~2150MHz Band RF Application |

Texas Instruments
|
CC1190 |
472Kb/15P |
850 - 950 MHz RF Front End |

Vishay Siliconix
|
CQY37N |
281Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2022 |
TSUS5200 |
112Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs |
TSUS6202 |
109Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs |

STMicroelectronics
|
STW22N95K5 |
884Kb/14P |
Automotive-grade N-channel 950 V March 2014 Rev 3 |

Vishay Siliconix
|
TSUS4400 |
113Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2021 |

Texas Instruments
|
CC1190 |
727Kb/17P |
850 ??950 MHz RF Front End |

Vishay Siliconix
|
CQY37N |
278Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs |
TSUS3400 |
108Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs |
TSUS6402 |
108Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs |
TSUS5402 |
118Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2021 |
TSUS5400 |
112Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs |
VSMS3700 |
141Kb/7P |
Infrared Emitting Diode, 950 nm, GaAs |