Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
NXP Semiconductors
|
TDA3810 |
50Kb/7P |
Spatial, stereo and pseudo-stereo sound circuit January 1985 |
Emerging Memory & Logic...
|
EMP216MFAW |
422Kb/11P |
2Mx16 Pseudo Static RAM |
EMP216MAAF |
471Kb/11P |
2Mx16 Pseudo Static RAM |
EMP216MEAF |
621Kb/15P |
2Mx16 Pseudo Static RAM |
EMP216MGAF |
551Kb/13P |
2Mx16 Pseudo Static RAM |
EMP216MFAF |
504Kb/12P |
2Mx16 Pseudo Static RAM |
EMP116MAAF |
471Kb/11P |
1Mx16 Pseudo Static RAM |
EMP116MEAW |
539Kb/14P |
1Mx16 Pseudo Static RAM |
EMP216MAAW |
388Kb/10P |
2Mx16 Pseudo Static RAM |
EMP216MGAW |
468Kb/12P |
2Mx16 Pseudo Static RAM |
EMP216MEAW |
163Kb/14P |
2Mx16 Pseudo Static RAM |
EMP116MFAW |
422Kb/11P |
1Mx16 Pseudo Static RAM |
Maxim Integrated Produc...
|
MAX11811TEVS |
6Mb/23P |
Pseudo Multi-Touch Demonstration Rev 0; 9/10 |
Emerging Memory & Logic...
|
EMP116MGAW |
468Kb/12P |
21Mx16 Pseudo Static RAM |
Rohm
|
BA8201 |
112Kb/8P |
Pseudo inductance for telephones |
Analog Devices
|
AD4000 |
1Mb/36P |
Precision, Pseudo Differential, SAR ADCs |
Jingjing Microelectroni...
|
EG1125 |
771Kb/11P |
Pseudo-resonance constant voltage switch |
Etron Technology, Inc.
|
EM566168 |
146Kb/12P |
1M x 16 Pseudo SRAM |
EM565168 |
122Kb/12P |
512K x 16 Pseudo SRAM |
EM567169BC |
129Kb/14P |
2M x 16 Pseudo SRAM |