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RDS Datasheets, PDF

Descripción buscado : 'RDS' - Total: 1350 (1/68) Page
Fabricante ElectrónicoNo. de piezavistaDescripción Electrónicos

SeCoS Halbleitertechnol...
SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
SSG4520H_12 N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
SST3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
STT3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET

International Rectifier
IRFBA1404P Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)

Motorola, Inc
MTE125N20E TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM

SamHop Microelectronics...
STM4615 Super high dense cell design for low RDS(ON).

Infineon Technologies A...
IPP16CN10N OptiMOS®2 Power-Transistor Excellent gate charge x RDS(on) product (FOM)

International Rectifier
IRFI9634G Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A)

Motorola, Inc
MTSF2P02HD SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM

SamHop Microelectronics...
STS3417 Super high dense cell design for low RDS(ON).

International Rectifier
IRF6215SPBF HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29Ω , ID=-13A )
IRFL9014 Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.8A)

NXP Semiconductors
SAA6579 Radio Data System RDS demodulator

SamHop Microelectronics...
STT3414 Super high dense cell design for low RDS(ON).

International Rectifier
IRF630SPBF HEXFET POWER MOSFET ( VDSS = 200V , RDS(on) = 0.40Ω , ID = 9.0A )
IRFP23N50L Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A)

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