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RDS ON =3.7MOHM 400V Datasheets, PDF

Descripción buscado : 'RDS ON =3.7MOHM 400V ' - Total: 1913 (1/96) Page
Fabricante ElectrónicoNo. de piezavistaDescripción Electrónicos

International Rectifier
IRF720SPBF HEXFET POWER MOSFET (VDSS = 400V , RDS(on) = 1.8Ω , ID = 3.3A )

SeCoS Halbleitertechnol...
SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
SSG4520H_12 N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
SST3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
STT3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET

International Rectifier
IRFZ44N Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)

Infineon Technologies A...
6PS0200R12KE3-3GH 3x 172A AC at 400V AC, forced air (fan not implemented)

Silan Microelectronics ...
SC6579 RADIO DATA SYSTEM (RDS) DEMODULATOR

COSMO Electronics Corp...
KAQV414 6PIN 400V N.C. TYPE SOLID STATE RELAY-MOSFET OUTPUT

Infineon Technologies A...
SPP21N50C3_07 New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

Motorola, Inc
MTD1N50E TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM

SamHop Microelectronics...
STBP434S Super high dense cell design for low RDS(ON).

Sanyo Semicon Device
LC7070N Sync and Error Detection & Correction LSIs for RDS

SamHop Microelectronics...
STT06L01 Super high dense cell design for low RDS(ON).

International Rectifier
IRF5NJ5305 POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-22A*)

Kersemi Electronic Co.,...
KSM10N65 Advanced high cell denity trench technology for ultra RDS(ON)

International Rectifier
IRFBE30 Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)

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