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RDS ON =3.7MOHM Datasheets, PDF

Descripción buscado : 'RDS ON =3.7MOHM ' - Total: 1358 (1/68) Page
Fabricante ElectrónicoNo. de piezavistaDescripción Electrónicos

SeCoS Halbleitertechnol...
SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
SSG4520H_12 N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
SST3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
STT3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET

International Rectifier
IRFP450N Power MOSFET(Vdss=500V, Rds(on)max=0.37ohm, Id=14A)
IRF3205 Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A⑤)

SamHop Microelectronics...
STUD320S Super high dense cell design for low RDS(ON).

SeCoS Halbleitertechnol...
SGM0410 3.5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET

International Rectifier
IRFR1111 Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A⑤)
IRF5210 Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Samsung semiconductor
S1A0905 RDS DEMODULATOR IC

SamHop Microelectronics...
STUD10N25 Super high dense cell design for low RDS(ON).

International Rectifier
IRF720SPBF HEXFET POWER MOSFET (VDSS = 400V , RDS(on) = 1.8Ω , ID = 3.3A )
IRFP264N Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)
IRF3706 Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)

SamHop Microelectronics...
STUD802S Super high dense cell design for low RDS(ON).

SeCoS Halbleitertechnol...
SSD02N65 2A , 650V , RDS(ON) 8 N-Ch Enhancement Mode Power MOSFET

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